sgsd100 SGSD200 complementary silicon power darlington transistors n sgs-thomson preferred salestypes n complementary pnp - npn devices n monolithic darlington configuration applications: n general purpose switching application n general purpose amplifiers description the sgsd100 is silicon epitaxial-base npn power transistor in monolithic darlington configuration mounted in to-218 plastic package. it is inteded for use in general purpose and high current amplifier applications. the complementary pnp type is the SGSD200. internal schematic diagram september 1997 1 2 3 to-218 absolute maximum ratings symbol parameter value unit npn sgsd100 pnp SGSD200 v cbo collector-base voltage (i e = 0) 80 v v ceo collector-emitter voltage (i b = 0) 80 v i c collector current 25 a i cm collector peak current 40 a i b base current 6 a i bm base peak current 10 a p tot total dissipation at t c 25 o c130w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c for pnp types voltage and current values are negative. 1/6
thermal data r thj-case thermal resistance junction-case max 0.96 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v ce = 80 v v ce = 80 v t c = 100 o c 0.5 1.5 ma ma i cev collector cut-off current (v be = -0.3v) v ce = 80 v v ce = 80 v t c = 100 o c 0.1 2 ma ma i ceo collector cut-off current (i b = 0) v ce = 60 v v ce = 60 v t c = 100 o c 0.5 1.5 ma ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 2 ma v ceo(sus) * collector-emitter sustaining voltage i c = 50 ma 80 v v ce(sat) * collector-emitter saturation voltage i c = 5 a i b = 20 ma i c = 5 a i b = 20 ma t c = 100 o c i c = 10 a i b = 40 ma i c = 10 a i b = 40 ma t c = 100 o c i c = 20 a i b = 80 ma i c = 20 a i b = 80 ma t c = 100 o c 0.95 0.8 1.2 1.3 2 2.3 1.2 1.75 3.5 v v v v v v v be(sat) * base-emitter saturation voltage i c = 20 a i b = 80 ma i c = 20 a i b = 80 ma t c = 100 o c 2.6 2.5 3.3 v v v be * base-emitter voltage i c = 10 a v ce = 3 v i c = 10 a v ce = 3 v t c = 100 o c 11.8 1.6 3v v h fe * dc current gain i c = 5 a v ce = 3 v i c = 5 a v ce = 3 v t c = 100 o c i c = 10 a v ce = 3 v i c = 10 a v ce = 3 v t c = 100 o c i c = 20 a v ce = 3 v i c = 20 a v ce = 3 v t c = 100 o c 600 500 300 5000 8000 4000 8000 2000 2000 15000 12000 6000 v f * diode forward voltage i f = 5 a i f = 5 a t c = 100 o c i f = 10 a i f = 10 a t c = 100 o c i f = 20 a i f = 20 a t c = 100 o c 1.2 0.85 1.6 1.4 2.3 1.3 v v v v v v e s/b second breakdown energy v cc = 30 v l = 3 mh v cc = 30 v l = 3 mh t c = 100 o c 250 250 mj mj i s/b second breakdown current v ce = 25 v t = 500 ms 6 a * pulsed: pulse duration = 300 m s, duty cycle 1.5 % for pnp type voltage and current values are negative. sgsd100/SGSD200 2/6
safe operating areas dc current gain (pnp type) dc current gain (pnp type) dc current gain (npn type) dc current gain (npn type) collector-emitter saturation voltage (npn type) sgsd100/SGSD200 3/6
collector-emitter saturation voltage (pnp type) sgsd100/SGSD200 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.7 4.9 0.185 0.193 c 1.17 1.37 0.046 0.054 d2.5 0.098 e 0.5 0.78 0.019 0.030 f 1.1 1.3 0.043 0.051 g 10.8 11.1 0.425 0.437 h 14.7 15.2 0.578 0.598 l2 C 16.2 C 0.637 l3 18 0.708 l5 3.95 4.15 0.155 0.163 l6 31 1.220 r C 12.2 C 0.480 ? 4 4.1 0.157 0.161 r a c d e h f g l6 l3 l2 l5 1 2 3 to-218 (sot-93) mechanical data p025a sgsd100/SGSD200 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - m alaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . sgsd100/SGSD200 6/6
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